| PART |
Description |
Maker |
| EM782SP16A EM782SP16A-10L EM782SP16A-10LL EM782SP1 |
512K x 16Bit Multiplexed Single Transistor RAM
|
Emerging Memory & Logic Solutions Inc
|
| KM416C256DLJ-7 KM416V256DLJ-5 KM416C256DLJ-5 KM416 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability
|
Samsung Electronic
|
| LP62S16256FU-70LLI LP62S16256FU-55LLI |
70ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
| K6F4016S6DFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| AKD4641EN-A |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| LP62E16256C-TSERIES LP62E16256CU-60LLT LP62E16256C |
256K X 16 BIT LOW VOLTAGE CMOS SRAM
60ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM
70ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
| SMP08FS-REEL SMP08-15 SMP08FP SMP08FPZ SMP08FSZ |
8 CHANNEL, SAMPLE AND HOLD AMPLIFIER, 3.6 us ACQUISITION TIME, PDSO16
Octal Sample and Hold with Multiplexed Input
Octal Sample-and-Hold with Multiplexed lnput
|
ANALOG DEVICES INC
|
| SSM2300 |
8 Channel Multiplexed Smaple and Hold
8 channel multiplexed sample and hold
|
Solid State Micro Technology
|
| M27C4002-15J1 M27C4002-80XJ6TR M27C4002-80XJ1X M27 |
256K X 16 UVPROM, 150 ns, CQCC44
256K X 16 UVPROM, 80 ns, CQCC44
256K X 16 UVPROM, 70 ns, CDIP40
256K X 16 OTPROM, 120 ns, PDIP40
256K X 16 OTPROM, 120 ns, PQCC44
256K X 16 OTPROM, 200 ns, PQCC44
256K X 16 UVPROM, 60 ns, CQCC44
|
STMICROELECTRONICS
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
